- A BJT consists of three semiconductor regions: the emitter, the base, and the collector, separated by two p-n junctions. - These regions are doped with impurities (donors or acceptors) to create n-type and p-type semiconductors. - The doping levels are designed specifically for the transistor's operation: - Emitter: Heavily doped (high concentration) to efficiently inject charge carriers (electrons or holes) into the base. - Base: Lightly doped (low concentration) and made very thin to allow most injected carriers from the emitter to reach the collector and to minimize recombination within the base. - Collector: Moderately doped (intermediate concentration, less than emitter but more than base) and typically larger in size to collect the carriers from the base and dissipate heat.
In a bipolar junction transistor
Asked in UPSC CDS 2 2016 · Topic: Physical Properties of Materials (Dielectric Properties)
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Answer: D. the base has the least concentration of impur‐ ity
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